The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Aug. 08, 2017
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;

Inventors:

Tsai-Yu Huang, Hsinchu County, TW;

Pin-Yao Wang, Hsinchu, TW;

Assignees:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 7/12 (2006.01); G11C 17/18 (2006.01); G11C 11/56 (2006.01); G11C 5/06 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 5/06 (2013.01); G11C 11/5692 (2013.01); G11C 17/18 (2013.01); H03K 19/018507 (2013.01);
Abstract

The memory cell includes a read selection transistor, a program selection transistor, and an anti-fuse capacitor. The read selection transistor has a first terminal coupled to a bit line, a second terminal, and a control terminal coupled to a read word line. The program selection transistor has a first terminal coupled to the second terminal of the read selection transistor, a second terminal coupled to a high voltage control line, and a control terminal coupled to a program word line. The anti-fuse capacitor has a first terminal coupled to the second terminal of the read selection transistor, and a second terminal coupled to a low voltage control line.


Find Patent Forward Citations

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Huang, Tsai-Yu. (2018). Memory cell with a read selection transistor and a program selection transistor (U.S. Patent No. 10141035). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10141035

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