The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Aug. 11, 2015
Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Hiroaki Yaguchi, Toyama, JP;

Makoto Nakajima, Toyama, JP;

Wataru Shibayama, Toyama, JP;

Satoshi Takeda, Toyama, JP;

Hiroyuki Wakayama, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/40 (2006.01); C09D 183/04 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); C09D 183/04 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/094 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/02126 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01);
Abstract

A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.


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