The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Aug. 08, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chung-Yen Chou, Hsinchu, TW;
Chih-Jen Chan, Changhua, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ru-Liang Lee, Hsinchu, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.