The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Apr. 06, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jheng-Sheng You, Hsinchu County, TW;
Hsin-Chih Lin, Hsinchu, TW;
Kun-Ming Huang, Taipei, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Chien-Li Kuo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.