The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Apr. 21, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Yukihiro Nagai, Saijo, JP;
Le-Tien Jung, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, Taiwan, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Abstract
A method for fabricating a semiconductor device includes the steps of: providing a substrate having a cell region and a peripheral region; forming a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer on the substrate; forming a thyristor on the cell region; removing the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer on the peripheral region; and forming a metal oxide semiconductor (MOS) transistor on the peripheral region.