The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Sep. 06, 2017
United Microelectronics Corp., Hsinchu, TW;
Ching-Wen Hung, Tainan, TW;
Yen-Tsai Yi, Tainan, TW;
Wei-Chuan Tsai, Changhua County, TW;
En-Chiuan Liou, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor structure includes the following steps. At first, a titanium layer is formed on a preformed layer. Then, a first titanium nitride layer is formed on the titanium layer. A first plasma treatment is applied to the first titanium nitride layer such that the first titanium nitride layer has a first N/Ti ratio. A second titanium nitride layer is formed on the first titanium nitride layer. A second plasma treatment is applied to the second titanium nitride layer such that the second titanium nitride layer has a second N/Ti ratio larger than the first N/Ti ratio.