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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134606 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

May. 15, 2015

Method of forming patterns and method of manufacturing integrated circuit device using the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-yoon Woo, Gwangmyeong-si, KR;

Hyun-woo Kim, Seongnam-si, KR;

Ju-hyung An, Hwaseong-si, KR;

Jin-young Yoon, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Daborah Chacko-Davis

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/3213 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/34 (2006.01); G03F 7/039 (2006.01); G03F 7/09 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); G03F 7/0392 (2013.01); G03F 7/091 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/2041 (2013.01); G03F 7/32 (2013.01); G03F 7/34 (2013.01); H01L 21/0273 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 27/10894 (2013.01);
Abstract

A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

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