The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Feb. 24, 2017
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Xiuling Li, Champaign, IL (US);
Jeong Dong Kim, Savoy, IL (US);
Munho Kim, Champaign, IL (US);
Lingyu Kong, Urbana, IL (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.