The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Nov. 11, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sunhye Hwang, Hwaseong-si, KR;
Myong Woon Kim, Daejeon, KR;
Younjoung Cho, Hwaseong-si, KR;
Sang Ick Lee, Daejeon, KR;
Sang Yong Jeon, Sejong, KR;
In Kyung Jung, Daejeon, KR;
Wonwoong Chung, Suwon-si, KR;
Jungsik Choi, Seongnam-si, KR;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
DNF Co., Ltd., Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/31 (2006.01); H01L 23/48 (2006.01); C23C 16/40 (2006.01); H01L 23/532 (2006.01); C23C 16/56 (2006.01); C01B 33/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02208 (2013.01); C01B 33/126 (2013.01); H01L 21/02123 (2013.01); H01L 21/02203 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CHbonding unit to Si—O bonding unit ranges from 0.5 to 5.