The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jan. 19, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsi-Kuei Cheng, Hsinchu County, TW;
Chih-Kang Han, Hsin-Chu, TW;
Ching-Fu Chang, Taipei, TW;
Hsin-Chieh Huang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate; a die disposed over the substrate, and including a die pad, a conductive via disposed over the die pad and a dielectric material surrounding the conductive via; a molding disposed over the substrate and surrounding the die; a lower dielectric layer disposed nearer the substrate and over the dielectric material and the molding; and an upper dielectric layer disposed further the substrate and over the lower dielectric layer, wherein a material content ratio in the upper dielectric layer is substantially greater than that in the lower dielectric layer, and the material content ratio substantially inversely affects a mechanical strength of the upper dielectric layer and the lower dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile