The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Sep. 22, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sharon N. Farrens, Boise, ID (US);
Keith R. Cook, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/70 (2006.01); H01L 23/02 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/268 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/30 (2006.01); H01L 21/302 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/48 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/02079 (2013.01); H01L 21/263 (2013.01); H01L 21/268 (2013.01); H01L 21/288 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/302 (2013.01); H01L 21/3003 (2013.01); H01L 21/304 (2013.01); H01L 21/3043 (2013.01); H01L 21/30608 (2013.01); H01L 21/4803 (2013.01); H01L 21/76254 (2013.01); H01L 21/76898 (2013.01); H01L 21/822 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 25/0657 (2013.01); H01L 21/6836 (2013.01); H01L 24/03 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1401 (2013.01); H01L 2224/14131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/94 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A semiconductor structure comprising a carrier wafer and a device wafer. The carrier wafer comprises trenches sized and configured to receive conductive pillars of the device wafer. The carrier wafer and the device wafer are fusion bonded together and back side processing effected on the device wafer. The device wafer may be released from the carrier wafer by one or more of mechanically cleaving, thermally cleaving, and mechanically separating. Methods of forming the semiconductor structure including the carrier wafer and the device wafer are disclosed.