The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Nov. 09, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Toshiharu Wada, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32009 (2013.01); H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of plasma etching includes an etching process that generates plasma from a process gas that includes fluorocarbon by using first high frequency power output by a first high frequency power source, and by the generated plasma, etches a low-k film with a metal-containing film as a mask. In the etching process, the first high frequency power is intermittently applied.