The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Aug. 26, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Luyen Vu, San Jose, CA (US);
Kalyan C. Kavalipurau, Santa Clara, CA (US);
Jae-Kwan Park, Cupertino, CA (US);
Erwin E. Yu, Santa Clara, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 7/04 (2006.01); G11C 16/30 (2006.01); G11C 16/32 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/04 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01); G11C 5/145 (2013.01);
Abstract
Sense circuits and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.