The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Dec. 10, 2014
Applicant:

Canon Nanotechnologies, Inc., Austin, TX (US);

Inventors:

Gaddi S. Haase, Albuquerque, NM (US);

Kosta S. Selinidis, Austin, TX (US);

Zhengmao Ye, Austin, TX (US);

Assignee:

Canon Nanotechnologies, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 59/02 (2006.01); G03F 7/00 (2006.01); B29L 7/00 (2006.01);
U.S. Cl.
CPC ...
B29C 59/022 (2013.01); G03F 7/0002 (2013.01); B29L 2007/001 (2013.01);
Abstract

Imprint lithography templates having leading and trailing edge borders are provided that achieve zero-gap imprinting between adjacent fields with full-feature height features provided in the pattern exclusion zones (PEZ) located between such fields. The leading edge borders include dummy features, e.g., elongated features directionally oriented parallel to the mesa edge, while the trailing edge border includes a recess extending to the mesa edges. When used in a step-and-repeat process, the trailing edge border overlaps edge portions of an adjacent imprinted field that were previously patterned by the leading edge border of the template, producing full-feature height features in the pattern exclusion zones between such fields, and avoiding gaps or open areas between such fields that otherwise lead to non-uniformity of downstream processes such as etch processes and CMP.


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