The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Nov. 29, 2017
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Fu Cheng Chen, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/02359 (2013.01); H01L 21/187 (2013.01); H01L 27/0688 (2013.01); H01L 2224/83095 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83395 (2013.01); H01L 2224/83889 (2013.01); H01L 2224/94 (2013.01);
Abstract

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.


Find Patent Forward Citations

Chen, Fu. (2018). Wafer bonding structure and wafer bonding method (U.S. Patent No. 10121762). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10121762

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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