The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Mar. 03, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jae-yeol Song, Seoul, KR;
Wan-don Kim, Yongin-si, KR;
Sang-Jin Hyun, Suwon-si, KR;
Jin-wook Lee, Seoul, KR;
Kee-sang Kwon, Hwaseong-si, KR;
Ki-hyung Ko, Yongin-si, KR;
Sung-woo Myung, Seoul, KR;
Abstract
In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.