The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Mar. 08, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kai-Yi Chen, Changhua County, TW;
Chih-Fei Lee, Tainan, TW;
Fu-Cheng Chang, Tainan, TW;
Ching-Hung Kao, Tainan, TW;
Chia-Pin Cheng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device and a method for fabricating the same are provided. In the method for fabricating the semiconductor device, at first, a semiconductor substrate is provided. Then, a trench is formed in the semiconductor substrate. Thereafter, a dielectric layer is formed to cover the semiconductor substrate, in which the dielectric layer has a trench portion located in the trench of the semiconductor substrate. Then, a reflective material layer is formed on the trench portion of the dielectric layer. Thereafter, the reflective material layer is etched to form an isolation structure, in which the isolation structure includes a top portion located on the semiconductor substrate and a bottom portion located in a trench formed by the trench portion of the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile