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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10115735 B1

PDFFull Text
Date of Patent:
Oct. 30, 2018

Filed:

Jun. 08, 2017

Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Fumitaka Amano, Yokkaichi, JP;

Kensuke Ishikawa, Yokkaichi, JP;

Shinya Inoue, Yokkaichi, JP;

Michiaki Sano, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/11582 (2017.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 27/11556 (2017.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02186 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53261 (2013.01); H01L 23/53266 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/456 (2013.01);
Abstract

A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.

Find Patent Forward Citations

Amano, Fumitaka. (2018). Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof (U.S. Patent No. 10115735). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10115735

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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