The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jun. 08, 2017
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Fumitaka Amano, Yokkaichi, JP;
Kensuke Ishikawa, Yokkaichi, JP;
Shinya Inoue, Yokkaichi, JP;
Michiaki Sano, Yokkaichi, JP;
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/11582 (2017.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 27/11556 (2017.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02186 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53261 (2013.01); H01L 23/53266 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.