The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Dec. 30, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Liang Li, Singapore, SG;

Yun Ling Tan, Singapore, SG;

Hai Cong, Singapore, SG;

Changwei Pei, Singapore, SG;

Alex See, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 27/11548 (2017.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 27/11548 (2013.01); H01L 27/11575 (2013.01);
Abstract

Embodiments of a method of processing semiconductor devices are presented. The method includes providing a substrate prepared with isolation regions having a non-planar surface topology. The substrate includes at least first and second regions. The first region includes a memory region and the second region includes a logic region. A hard mask layer is formed covering the substrate and the isolation regions with non-planar surface topology. The method includes selectively processing an exposed portion of the hard mask layer over a select region while protecting a portion of the hard mask layer over a non-select region. The top substrate area and isolation regions of the non-select region are not exposed during processing of the portion of the hard mask layer over the select region. Hard mask residue is completely removed over the select region during processing of the exposed portion of the hard mask layer.


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