The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Mar. 16, 2017
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Naoki Inoue, Haibara-gun, JP;

Naohiro Tango, Haibara-gun, JP;

Michihiro Shirakawa, Haibara-gun, JP;

Kei Yamamoto, Haibara-gun, JP;

Akiyoshi Goto, Haibara-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/32 (2006.01); G03F 7/11 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); C08F 220/18 (2006.01); C08F 220/28 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/327 (2013.01); C08F 220/18 (2013.01); C08F 220/28 (2013.01); G03F 7/0045 (2013.01); G03F 7/0397 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/027 (2013.01); C08F 2220/283 (2013.01);
Abstract

Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.


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