The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Mar. 20, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Bo-Tsung Tsai, Kaohsiung, TW;

Hung-Da Dai, Tainan, TW;

Mao-Yi Sun, Tainan, TW;

Wei-Li Hu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/1462 (2013.01); H01L 27/14614 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01);
Abstract

A pixel structure of an image sensor and fabrication methods thereof are provided. The pixel structure includes a semiconductor substrate and plural pixel units disposed on the semiconductor substrate. The pixel units are electrically connected to each other, and each of the pixel units includes a light-sensitive region, a transfer gate and a protection layer. A terminal portion of the protection layer is covered by the transfer gate, and a width of the terminal portion of the protection layer is progressively decreased along a depthwise direction of the terminal portion of the protection layer. In the fabrication methods of the pixel structure, the protection layers of the pixel units are formed by doping with a tilt angle, so as to form the terminal portion of the protection layer.


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