The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jan. 13, 2014
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Ralf Otremba, Kaufbeuren, DE;
Josef Höglauer, Heimstetten, DE;
Jürgen Schredl, Mering, DE;
Xaver Schlögel, Sachsenkam, DE;
Klaus Schiess, Allensbach, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/556 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 23/552 (2013.01); H01L 23/556 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/84801 (2013.01); H01L 2924/01103 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/2075 (2013.01); H01L 2924/20751 (2013.01); H01L 2924/3025 (2013.01);
Abstract
A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.