The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Sep. 30, 2016
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Ryugo Oba, Tokyo, JP;

Takumi Shotokuji, Tokyo, JP;

Naotoshi Kirihara, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 33/00 (2010.01); H01S 5/00 (2006.01); B23K 26/00 (2014.01); B23K 26/40 (2014.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/268 (2013.01); H01L 21/67092 (2013.01); H01L 21/6836 (2013.01); H01L 33/00 (2013.01); H01S 5/00 (2013.01); B23K 26/0057 (2013.01); B23K 26/40 (2013.01); H01L 2933/0033 (2013.01);
Abstract

An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.


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