The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jun. 20, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Sean X. Lin, Watervliet, NY (US);
Xunyuan Zhang, Troy, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); C23C 16/06 (2006.01); C22B 23/00 (2006.01); C01G 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28061 (2013.01); C23C 16/06 (2013.01); H01L 21/76802 (2013.01); H01L 29/665 (2013.01); C01G 51/00 (2013.01); C22B 23/00 (2013.01);
Abstract
Methods for forming interconnects that include cobalt. An interconnect opening is formed in a dielectric layer that penetrates from a top surface of the dielectric layer into the dielectric layer. A first cobalt layer is formed at a bottom of the interconnect opening and partially fills the interconnect opening. A second cobalt layer is selectively deposited on the first cobalt layer and grows upwardly from the first cobalt layer at the bottom of the interconnect opening.