The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 26, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuan-Wei Huang, Taoyuan, TW;

Chia-Ying Lee, New Taipei, TW;

Ming-Chung Liang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/461 (2013.01); H01L 21/76816 (2013.01);
Abstract

The present disclosure relates to an integrated chip formed by a self-aligned litho-etch process. In some embodiments, the integrated chip has a first plurality of shapes of an integrated chip layer arranged along a first direction at a first pitch. The first plurality of shapes include a first two shapes separated by a first end-to-end space along a second direction perpendicular to the first direction. A second plurality of shapes of the integrated chip layer are arranged along the first direction at a second pitch. The second plurality of shapes include a second two shapes separated by a second end-to-end space along the second direction. A ratio of the first end-to-end space to the second end-to-end space is approximately equal to 2.5:1.


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