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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10109464 B1

PDFFull Text
Date of Patent:
Oct. 23, 2018

Filed:

Oct. 26, 2016

Minimization of ring erosion during plasma processes

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Olivier Joubert, Meylan, FR;

Olivier Luere, Sunnyvale, CA (US);

Vedapuram S. Achutharaman, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan, LLP

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); C23C 4/02 (2006.01); C23C 4/10 (2016.01); C23C 4/00 (2016.01); C23C 4/134 (2016.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32495 (2013.01); C23C 4/00 (2013.01); C23C 4/02 (2013.01); C23C 4/10 (2013.01); C23C 4/134 (2016.01); C23C 16/401 (2013.01); C23C 16/4404 (2013.01); H01J 37/32477 (2013.01); H01J 37/32504 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 37/32862 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/68721 (2013.01);
Abstract

Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.

Find Patent Forward Citations

Joubert, Olivier. (2018). Minimization of ring erosion during plasma processes (U.S. Patent No. 10109464). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10109464

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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