The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jul. 06, 2017
Tokyo Electron Limited, Tokyo, JP;
Daihen Corporation, Osaka-shi, Osaka, JP;
Norikazu Yamada, Miyagi, JP;
Toshifumi Tachikawa, Miyagi, JP;
Koichi Nagami, Miyagi, JP;
Satoru Hamaishi, Osaka, JP;
Koji Itadani, Osaka, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
DAIHEN CORPORATION, Osaki-Shi, Osaka, JP;
Abstract
A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring time; a moving-average-value calculating process of calculating a moving average value of the voltage detection signals and the electric current detection signals; a load impedance-measurement-value calculating process of calculating a measurement value of a load impedance with respect to a first high frequency power supply; and a reactance control process of controlling a reactance of a variable reactance element such that the measurement value of the load impedance is equal or approximate to a preset matching point corresponding to impedance on the side of the first high frequency power supply.