The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jan. 11, 2016
Applicant:
Fei Company, Hillsboro, OR (US);
Inventors:
Tomas Vystavel, Brno, CZ;
Aurelien Philippe Jean Maclou Botman, Hillsboro, OR (US);
Assignee:
FEI COMPANY, Hillsboro, OR (US);
Primary Examiner:
Int. Cl.
CPC ...
G01N 35/00 (2006.01); B05D 5/02 (2006.01); B05C 3/10 (2006.01); B05D 3/04 (2006.01); B05D 5/00 (2006.01); C23C 18/16 (2006.01); C25D 5/16 (2006.01); C25D 7/12 (2006.01); C25D 21/04 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01J 37/20 (2006.01); H01J 37/317 (2006.01); G01N 1/32 (2006.01); G01N 1/44 (2006.01);
U.S. Cl.
CPC ...
B05D 5/02 (2013.01); B05C 3/10 (2013.01); B05D 3/0493 (2013.01); B05D 5/00 (2013.01); C23C 18/1633 (2013.01); C25D 5/16 (2013.01); C25D 7/12 (2013.01); C25D 21/04 (2013.01); H01J 37/20 (2013.01); H01J 37/317 (2013.01); H01L 21/02041 (2013.01); H01L 21/30604 (2013.01); H01L 21/32051 (2013.01); G01N 1/32 (2013.01); G01N 1/44 (2013.01); H01J 2237/20 (2013.01); H01J 2237/2067 (2013.01); H01J 2237/31745 (2013.01);
Abstract
A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.