The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Mar. 20, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John C. Arnold, North Chatham, NY (US);

Anuja E. DeSilva, Slingerlands, NY (US);

Nelson M. Felix, Briarcliff Manor, NY (US);

Chi-Chun Liu, Altamont, NY (US);

Yann A. M. Mignot, Slingerlands, NY (US);

Stuart A. Sieg, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); Y10S 438/947 (2013.01); Y10S 438/95 (2013.01);
Abstract

Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.


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