The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

May. 23, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yi Jiang, Singapore, SG;

Bharat Bhushan, Singapore, SG;

Wanbing Yi, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Pak-Chum Danny Shum, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/5607 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16152 (2013.01);
Abstract

Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding at the device-level is disclosed. The MRAM chip includes a magnetic shield structure that is substantially surrounding a magnetic tunnel junction (MTJ) bit or device of a MTJ array. The magnetic shield may be configured in the form of a cylindrical shield structure or magnetic shield spacer that substantially surrounds the MTJ bit or device. The magnetic shield structure in the form of cylindrical shield structure or magnetic shield spacer may include top and/or bottom plate shield. The magnetic shield structure in various forms and configurations protect the MTJ stack from external or local magnetic fields. This magnetic shielding structure is applicable for both in-plane and perpendicular MRAM chips.


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