The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
May. 17, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Li-Yen Lin, Wujie Township, Yilan County, TW;
Ching-Yu Chang, Yilang County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a bottom layer over a substrate and forming a middle layer over the bottom layer. The middle layer includes a carbon backbone and a first side chain bonded to the carbon backbone, and the first side chain has a hydrophilic group. The method includes forming a top layer over the middle layer and patterning the top layer to form a patterned top layer. The method includes patterning the middle layer by using the patterned top layer as a mask to form a patterned middle layer. The method includes patterning the bottom layer to form a patterned bottom layer. The method also includes removing the patterned middle layer by a base solution, and the middle layer is soluble in the base solution by the hydrophilic group.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile