The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Sep. 02, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Christopher B. Shing, Fishkill, NY (US);

Joyce C. Liu, Carmel, NY (US);

Richard D. Kaplan, Wappingers Falls, NY (US);

Timothy J. Wiltshire, Fishkill, NY (US);

Darius Brown, Latham, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/40 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2028 (2013.01); G03F 7/32 (2013.01); G03F 7/40 (2013.01);
Abstract

Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.


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