The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Nov. 23, 2016
United Microelectronics Corp., Hsinchu, TW;
Chia-Ching Hsu, Lunbei Township, TW;
Liang Yi, Singapore, SG;
Shen-De Wang, Zhudong Township, TW;
Ko-Chi Chen, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device is provided, including a lower conducting layer formed above a substrate, an upper conducting layer, and a memory cell structure formed on the lower conducting layer (such as formed between the lower and upper conducting layers). The memory cell structure includes a bottom electrode formed on the lower conducting layer and electrically connected to the lower conducting layer, a transitional metal oxide (TMO) layer formed on the bottom electrode, a TMO sidewall oxides formed at sidewalls of the TMO layer, a top electrode formed on the TMO layer, and spacers formed on the bottom electrode. The upper conducting layer is formed on the top electrode and electrically connected to the top electrode.