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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090397 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Aug. 29, 2014

Semiconductor device structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Ming-Chang Lee, Hsinchu, TW;

Chia-Der Chang, Hsinchu, TW;

Chih-Hung Lu, Zhudong Township, TW;

Chung-Tsun Sun, Hsinchu, TW;

Chung-Wei Hung, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Hajar Kolahdouzan

Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/51 (2006.01); H01L 29/165 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/26506 (2013.01); H01L 21/28518 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76855 (2013.01); H01L 21/76897 (2013.01); H01L 29/165 (2013.01); H01L 29/517 (2013.01); H01L 29/665 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials.

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