Power semiconductor contact structure and method for the production thereof

Abstract

A power semiconductor contact structure for power semiconductor modules, which has at least one substrateand a metal molded bodyas an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layerwith regions of varying thickness. The metal molded bodytakes the form here of a flexible contacting filmof such a thickness that this contacting film is sintered with its sidefacing the sintering layeronto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded bodyor the substrate, followed by sintering together the contacting filmwith the substrateby using the properties of the layer of sintering material that are conducive to connection, the contacting filmbeing made to develop its distinct form to correspond to the varying thickness of the layer of sintering material