The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Sep. 16, 2016
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Shun Aoki, Tokyo, JP;

Hiromitsu Tanaka, Tokyo, JP;

Goji Wakamatsu, Tokyo, JP;

Yoshio Takimoto, Tokyo, JP;

Masayoshi Ishikawa, Tokyo, JP;

Toru Kimura, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/09 (2006.01); G03F 7/38 (2006.01); G03F 7/075 (2006.01); G03F 7/32 (2006.01); C07C 279/08 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); C07C 217/18 (2006.01); H01L 21/306 (2006.01); C08L 61/06 (2006.01); C08G 8/04 (2006.01); G03F 7/26 (2006.01); C08G 8/20 (2006.01); C08G 8/36 (2006.01); C09D 161/14 (2006.01); C09D 183/04 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07C 217/18 (2013.01); C07C 279/08 (2013.01); C08G 8/04 (2013.01); C08G 8/20 (2013.01); C08G 8/36 (2013.01); C08L 61/06 (2013.01); C09D 161/14 (2013.01); C09D 183/04 (2013.01); G03F 7/075 (2013.01); G03F 7/094 (2013.01); G03F 7/26 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); G03F 7/405 (2013.01); H01L 21/02057 (2013.01); H01L 21/0274 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); Y02P 20/582 (2015.11);
Abstract

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.


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