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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074725 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Mar. 08, 2017

Semiconductor structure and manufacturing method thereof

Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Shih-Min Chou, Tainan, TW;

Yun-Tzu Chang, Kaohsiung, TW;

Wei-Ning Chen, Tainan, TW;

Wei-Ming Hsiao, Miaoli County, TW;

Chia-Chang Hsu, Kaohsiung, TW;

Kuo-Chih Lai, Tainan, TW;

Yang-Ju Lu, Changhua, TW;

Yen-Chen Chen, Tainan, TW;

Chun-Yao Yang, Kaohsiung, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsinchu, TW;

Attorney:

WPAT, PC

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 21/02244 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/762 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823857 (2013.01);
Abstract

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

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