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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074558 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Nov. 01, 2017

Finfet structure with controlled air gaps

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen-Che Tsai, Hsinchu, TW;

Min-Yann Hsieh, Kaohsiung, TW;

Hua-Feng Chen, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/28568 (2013.01); H01L 21/31116 (2013.01); H01L 21/76843 (2013.01); H01L 21/76882 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01);
Abstract

The present disclosure provides a method that includes forming an isolation feature in a semiconductor substrate; forming a first fin and a second fin on the semiconductor substrate, wherein the first and second fins are laterally separated by the isolation feature; and forming an elongated contact feature landing on the first and second fins. The elongated contact feature is further embedded in the isolation feature, enclosing an air gap vertically between the contact feature and the isolation feature.

Find Patent Forward Citations

Tsai, Wen-Che. (2018). Finfet structure with controlled air gaps (U.S. Patent No. 10074558). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10074558

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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