The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Oct. 23, 2017
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Masanobu Shirakawa, Chigasaki Kanagawa, JP;

Takuya Futatsuyama, Yokohama Kanagawa, JP;

Kenichi Abe, Yokohama Kanagawa, JP;

Hiroshi Nakamura, Fujisawa Kanagawa, JP;

Keisuke Yonehama, Kamakura Kanagawa, JP;

Atsuhiro Sato, Meguro Tokyo, JP;

Hiroshi Shinohara, Yokosuke Kanagawa, JP;

Yasuyuki Baba, Ayase Kanagawa, JP;

Toshifumi Minami, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 29/42 (2006.01); H01L 27/11582 (2017.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H01L 27/1157 (2017.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 29/42 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); G11C 16/3445 (2013.01);
Abstract

A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.


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