The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Apr. 14, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Alexander Reznicek, Troy, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Nicolas L. Breil, Mountain View, CA (US);
Oleg Gluschenkov, Tannersville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/3115 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02623 (2013.01); H01L 21/31155 (2013.01); H01L 21/324 (2013.01); H01L 21/845 (2013.01); H01L 29/6653 (2013.01);
Abstract
Relaxed silicon germanium fins are formed on a bulk silicon substrate through the lateral recrystallization of molten silicon germanium having high germanium content. Following formation of the silicon germanium fins, the silicon is selectively recessed. The resulting trenches are filled with electrically insulating material and then recessed down to the bottoms of the fins.