The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Mar. 01, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Che Yen, Taoyuan, TW;
Po-Ya Lai, Changhua County, TW;
Tien-Hao Tang, Hsinchu, TW;
Kuan-Cheng Su, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An ESD protection device includes a semiconductor substrate, a well, a gate structure, a first source/drain region, a second source/drain region, a first doped region, and a second doped region. The well is disposed in the semiconductor substrate. The gate structure is disposed on the well. The first source/drain region and the second source/drain region are disposed in the well and disposed at two opposite sides of the gate structure respectively. The first doped region is disposed in the first source/drain region. The second doped region is disposed in the second source/drain region. A conductivity type of the first doped region is complementary to that of the first source/drain region. A conductivity type of the second doped region is complementary to that of the second source/drain region. A conductivity type of the well is complementary to that of the first source/drain region and the second source/drain region.