The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Aug. 19, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Jiann Lih Wu, Hsin-Chu, TW;

Chi-Ming Yang, Hsinchu, TW;

James Jeng-Jyi Hwang, Chu-Tong Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 37/013 (2012.01); B24B 37/015 (2012.01); B24B 49/04 (2006.01); B24B 49/14 (2006.01); H01L 21/306 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); B24B 49/10 (2006.01); B24B 37/04 (2012.01); B24B 37/10 (2012.01);
U.S. Cl.
CPC ...
B24B 49/04 (2013.01); B24B 37/013 (2013.01); B24B 37/015 (2013.01); B24B 37/042 (2013.01); B24B 37/105 (2013.01); B24B 49/105 (2013.01); B24B 49/14 (2013.01); H01L 21/30625 (2013.01); H01L 21/67075 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 22/20 (2013.01);
Abstract

A localized chemical mechanical polishing (CMP) platform is provided. A table is configured to support a workpiece with a to-be-polished surface. A polishing pad is spaced from the table with a width less than about half that of the table. The polishing pad is configured to individually polish rough regions of hillocks or valleys on the to-be-polished surface. A slurry distribution system is configured to apply slurry to an interface between the polishing pad and the workpiece. A cleaning system is configured to clean the workpiece in situ on the table. A drying system is configured to dry the workpiece in situ on the table. A method for CMP with local profile control and a system with local profile control are also provided.


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