The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
May. 27, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Junjing Bao, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Yanxiang Liu, Glenville, NY (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/288 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/495 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/288 (2013.01); H01L 21/31051 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/6656 (2013.01); H01L 29/785 (2013.01);
Abstract
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is formed on a sidewall of the sacrificial cap. The sacrificial cap is selectively etched, leaving a cap recess, and the upper dielectric side spacer facing the cap recess. Silicon nitride is filled in the cap recess, to form a center cap and a protective cap having center cap and the upper dielectric spacer.