The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jan. 09, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hou-Jen Chiu, Taichung, TW;
Ya-Ting Lin, Hsinchu, TW;
Mei-Ling Chao, Tainan, TW;
Tien-Hao Tang, Hsinchu, TW;
Kuan-Cheng Su, Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 29/0653 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate electrode. The fin shaped structure is disposed on a substrate. The shallow trench isolation is disposed in the substrate and surrounds the fin shaped structure. The diffusion break structure is disposed in the fin shaped structure, and the gate electrode is disposed across the fin shaped structure.