The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Sep. 08, 2017
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventor:

Bradley Paul Smith, Austin, TX (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 21/74 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/74 (2013.01); H01L 21/84 (2013.01); H01L 29/1083 (2013.01); H01L 29/66537 (2013.01); H01L 29/7838 (2013.01);
Abstract

An integrated circuit includes a first device having a first threshold voltage (Vt) adjusting implant extension region having a first conductivity type and extending from a first implant rail region under an entirety of a first channel region. The first implant rail region and first Vt adjusting implant extension region are contiguous, and the first channel region is over an insulating layer and the insulating layer is over the first implant rail region and first Vt adjusting implant extension region. A second device has a second Vt adjusting implant extension region having the first conductivity type and extending from a second implant rail region under an entirety of a second channel region. The second implant rail region and second Vt adjusting implant extension region are contiguous, and the second channel region is over the insulating layer and the insulating layer is over the second implant rail region and second Vt adjusting implant extension region.


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