The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jul. 29, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates a back-end-of-the-line (BEOL) metallization stack having an air gap disposed between adjacent metal interconnect features, which provides for an inter-level dielectric material with a low dielectric constant. In some embodiments, the BEOL metallization stack has an inter-level dielectric (ILD) layer disposed over a substrate. A metal interconnect layer is disposed within the ILD layer, and an air gap is arranged disposed within the ILD layer at a position between a first feature and a second feature of the metal interconnect layer. The air gap has an upper surface with a first curve that meets a second curve at a peak arranged below a top of the metal interconnect layer. The first curve becomes steeper as a distance from the peak decreases and the second curve becomes steeper as a distance from the peak decreases.