The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Dec. 27, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Cnrs Centre National DE LA Recherche Scientifique, Paris, FR;
Applied Materials, Inc., Santa Clara, CA (US);
Nicolas Posseme, Grenoble, FR;
Sebastien Barnola, Carantec, FR;
Olivier Joubert, Meylan, FR;
Srinivas Nemani, Santa Clara, CA (US);
Laurent Vallier, Meylan, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CNRS—Centre National de la Recherche Scientifique, Paris, FR;
APPLIED MATERIALS, Inc, Santa Clara, CA (US);
Abstract
The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O) and/or nitrogen (N) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SiHfor which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SiFand SiCl, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.