The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jun. 14, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yung-Yao Lee, Zhubei, TW;

Jui-Chun Peng, Hsinchu, TW;

Ho-Ping Chen, Jhubei, TW;

Heng-Hsin Liu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7034 (2013.01); G03F 9/7084 (2013.01); G03F 9/7088 (2013.01);
Abstract

In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.


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