The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Jan. 19, 2017
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Chin-Li Kao, Kaohsiung, TW;

Chang-Chi Lee, Kaohsiung, TW;

Yi-Shao Lai, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 23/49827 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/06 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/15763 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15798 (2013.01); H01L 2924/3511 (2013.01);
Abstract

The present disclosure relates to a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor element including a main body, a plurality of conductive vias, and at least one filler. The conductive vias penetrate through the main body. The filler is located in the main body, and a coefficient of thermal expansion (CTE) of the filler is different from that of the main body and the conductive vias. Thus, the CTE of the overall semiconductor element can be adjusted, so as to reduce warpage.


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