The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Nov. 21, 2016
Applicant:

Ebara Corporation, Tokyo, JP;

Inventors:

Yoichi Kobayashi, Tokyo, JP;

Yoichi Shiokawa, Tokyo, JP;

Katsuhide Watanabe, Tokyo, JP;

Assignee:

EBARA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/00 (2012.01); H01L 21/67 (2006.01); H01L 21/3105 (2006.01); H01L 21/66 (2006.01); B24B 37/013 (2012.01); B24B 37/10 (2012.01); B24B 37/20 (2012.01); B24B 37/32 (2012.01); B24B 49/10 (2006.01); B24B 49/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); B24B 37/013 (2013.01); B24B 37/105 (2013.01); B24B 37/205 (2013.01); B24B 37/32 (2013.01); B24B 49/105 (2013.01); B24B 49/12 (2013.01); H01L 21/31053 (2013.01); H01L 21/67092 (2013.01); H01L 22/26 (2013.01);
Abstract

A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.


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